铌酸锂（LiNbO3）晶体 Wafer
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Specification for 铌酸锂（LiNbO3）晶体 Wafer
| Grade（等级） | Dimeter（直径） | Type/dopant（类型/掺杂） |
Orientaion |
crystal struction | spectrum penetrate wave length | spectrum refraction rate | Resistivity（电阻率）(1) | Resistivity（电阻率）(2) | Flat |
Surface/Roughness（表面粗糙度） | Geometric parameter |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 铌酸锂（LiNbO3）晶体 wafer | 25.4mm 50.8mm 76.5mm 100mm |
Zn/Er/intrinsic | X Y Z cut |
Trigonal | 0.4～2.90μm | n0=2.286 ne=2.203 @632.8nm | 1 - 9 *E10 ohm-cm | N/A 16mm 22.5mm 32.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um | |
| 钽酸锂（LiTaO3）晶体 wafer | 25.4mm 50.8mm 76.5mm 100mm | intrinsic/Mg/Fe | X Y Z cut | hexagonal | 0.4~5.0 um | no = 2.176 ne= 2.180 @ 633 nm | 0.9 - 9 *E11 ohm-cm | 1.0*E11 - 9.9 *E19 ohm-cm |
N/A 16mm 22.5mm 32.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
| 锗酸铋（Bi4Ge3O12）晶体 wafer | 25.4mm 50.8mm 76.5mm 100mm | intrinsic/Mg/Fe | X Y Z cut | hexagonal | 0.4~5.0 um | no = 2.176 ne= 2.180 @ 633 nm | 0.9 - 9 *E11 ohm-cm | 1.0*E11 - 9.9 *E19 ohm-cm |
N/A 16mm 22.5mm 32.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
| (BOS)晶体 wafer | 25.4mm 50.8mm 76.5mm 100mm | intrinsic/Mg/Fe | X Y Z cut | hexagonal | 0.4~5.0 um | no = 2.176 ne= 2.180 @ 633 nm | 0.9 - 9 *E11 ohm-cm | 1.0*E11 - 9.9 *E19 ohm-cm |
N/A 16mm 22.5mm 32.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |
| 硅酸镓镧(LGS) | 25.4mm 50.8mm 76.5mm 100mm | Y- cut; Rotated Y-cut on 1º….2º +/-0,02º | Trigonal |
|
N/A 16mm 22.5mm 32.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um |